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majority-carrier density

См. также в других словарях:

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  • Debye length — In plasma physics, the Debye length (also called Debye radius), named after the Dutch physicist and physical chemist Peter Debye, is the scale over which mobile charge carriers (e.g. electrons) screen out electric fields in plasmas and other… …   Wikipedia

  • Van der Pauw method — The van der Pauw Method is a commonly used technique to measure the sheet resistance of a material. The Van der Pauw method is often used to measure the Hall effect, which characterises a sample of semiconductor material and can be successfully… …   Wikipedia

  • p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… …   Wikipedia

  • P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… …   Wikipedia

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  • Deep-level transient spectroscopy — (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are …   Wikipedia

  • Electrical resistance — is a ratio of the degree to which an object opposes an electric current through it, measured in Ohms. Its reciprocal quantity is electrical conductance measured in Siemens. Assuming a uniform current density, an object s electrical resistance is… …   Wikipedia

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